中文摘要：

采用改性的Hummers法制备石墨烯氧化物（GO）,并将其滴涂在玻碳电极（GCE）表面。通过电化学还原将GO还原为石墨烯,并进一步采用电化学聚合法在石墨烯表面形成聚邻苯二胺（PoPD）膜,从而制备了PoPD/石墨烯修饰GCE。将EV71抗体固定在修饰电极表面,制备新型的电化学免疫传感器。当发生免疫反应时,由于EV71抗原与抗体生成的免疫复合物阻碍了电子的传递,PoPD的氧化峰电流下降。当抗原的浓度在0.1-80ng/mL范围内,PoPD氧化峰电流的降低值与抗原的浓度成正比。该免疫传感器对EV71的检测限为0.08ng/mL（信噪比为3）。

英文摘要：

Graphene oxide （GO） was prepared by a modified Hummers method and dropped onto the sur- face of a glassy carbon electrode （GCE）. The GO was electrochemically reduced to graphene, and poly （o --phenylenediamine） （PoPD） film was then electrosynthesized on the surface of graphene to prepare the PoPD/graphene modified GCE. A novel electrochemical immunosensor was obtained by immobilizing anti --EV71 onto the surface of this modified electrode. When the immunoreaction between anti--EV71 and EV71 antigen in the solution took place, the electron transfer would be hindered by the produced immunocomplex and thus the oxidation peak current of PoPD would decrease. The decrease in the oxidation peak current of PoPD was proportional to the concentration of EV71 antigen in the range from 0.1 to 80ng/mL, and the detection limit was as low as 0.08ng/mL （signal--to--noise ratio of 3）.