中文摘要：

采用射频磁控溅射结合后续热处理方法制备了镶嵌在SiO2基质中的Si纳米晶（nanocrystalline silicon,nc-Si）薄膜,实验结果表明,在单层nc-Si薄膜中,随着硅含量的增加,Si纳米晶的尺寸、分布密度也增加;在多层nc-Si/SiO2薄膜中,SiO2层会起到限制nc-Si层中Si纳米晶生长的作用,使多层结构中Si纳米晶的尺寸分布更加集中。

英文摘要：

Nanocrystalline silicon（nc-Si） embedded in an amorphous matrix of silicon oxide were synthesized by a magnetron co-sputtering process and post-annealing.It was found that the size and the distribution of the nc-Si increased with the silicon content increasing in single layer nc-Si thin film,while in multilayer nc-Si/SiO2 film,SiO2 layer would limit the effect of the growth of nc-Si,thereby,the size distribution of nc-Si in multilayer would be more concentrated.