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中文摘要：
采用简单的碳热还原法，以碳粉和Si02微粉分别作为碳源和硅源，在1550℃高温真空气氛箱式炉中制备SiC纳米线。并利用X射线衍射（XI国）、扫描电镜（SEM）和透射电镜（TEM）、傅里叶变换红外（FTIR）等测试手段对反应产物进行组分、形貌和结构表征。研究结果表明：产物为直线六棱柱形状的β-SiC纳米线，直径在50～300nm之间，纳米线内部含有较多的堆垛层错；纳米线主要以气-固（VS）机制生长。
英文摘要：
SiC nanowires are synthesized via the reaction between carbon powder and silicon dioxide powder by a simple carbon-thermal reduction in high-temperature vacuum furnace at 1550 ~C. X-ray dif- fraction （XRD）, Scanning electron microscopy （SEM） and transmission electron microscopy （TEM）, Fourier transform infrared spectrometer （FTIR） are employed to characterize the obtained product. The β- SiC nanowires experience a beeline hexagonal section and diameters in the range of 50 -300 nm. A high stacking faults density exists in the nanowires. The growth mechanism of the nanowires is considered to involve a vapor-solid （VS） process.
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