中文摘要：

采用变分法研究了在外磁场作用下GaN／AlxGa1-xN无限抛物量子阱（PQW）中类氢杂质态能级，给出不同磁场下杂质态基态能、结合能随阱宽的变化关系以及能量随磁场强度变化的函数关系。数值结果表明：外磁场对类氢杂质能量和结合能均有明显的影响，杂质态能量随磁场的增强而显著增大，并且随阱宽的增大而增大；GaN／Al0.3Ga0.7 N PQW对杂质态的束缚程度比GaAs／Al0.3Ga0.7As PQW强。

英文摘要：

The energy of a hydrogenic impurity in GaN/AlxGa1-x N compositional parabolic quantum well （PQW） is investigated by variational method. The ground state, the binding energy of hydrogenic impurity as a function of the well width and the energy of hydrogenic impurity as a function of the magnetic field are given. The numerical results indicate that the influence of external magnetic field on the ground state and the binding energy of a hydrogenic impurity is obvious,and the influence increases with increasing well width. The bound degree of the GaN/Al0.3 Ga0.7 N PQW to the hydrogenic impurity is stronger than that of the GaAs/Al0.3Ga0.7As PQW.