中文摘要：

采用改进的Lee-Low-Pines（LLP）变分方法，处理纤锌矿GaN／A1N量子阱材料中电子与受限长波光学声子的相互作用，给出束缚极化子基态能量和结合能随量子阱宽度L的变化关系．在数值计算中考虑了纤锌矿GaN和A1N构成的方量子阱材料中长波光学声子模的各向异性．结果表明，束缚极化子基态能量和结合能随阱宽L的增大而减小，阱宽较小时减小的速度比较快，阱宽较大时减小的速度比较慢，，最居缓慢地接近GaN体材料中的三维值．纤锌矿GaN／A1N量子阱材料中电子一声子相互作用对束缚极化予能量韵贡献比较大，该值远大于闪锌矿GaAs／AIAs量子阱材料中的相应值．作为对比，给出闪锌矿GaN／A1N量子阱材料中束缚极化子基态能量和结合能随阱宽的变化关系。

英文摘要：

In this paper,the interaction between an electron and confined Longitudinal Optical phonons in wurtzite GaN/A1N quantum wells is investigated by using Lee-Low-Pines variational method. The ground state energies and the binding energies of the bound polaron are calculated as the function of well width L. The anisotropy of the long-wave optical phonon mode in wurtzite GaN/ A1N is considered. The result indicates that the ground state energy and binding energy reduce with increasing well width L,Both of the two energies rapidly reduce at smaller L, but slowly reduce at larger L,and finally approach to the bulk value of GaN. For the qualitative analysis and comparison, the ground state energy and binding energy of the bound polaron in zinc blende GaN/A1N quantum wells are calculated as functions of well width L.