中文摘要：

采用激光分子束外延技术,利用两步法,在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示,TiN薄膜材料表面光滑,在10μm×10μm范围内,均方根粗糙度为0.842nm.霍耳效应测量结果显示,TiN薄膜在室温条件下的电阻率为3.6×10^-5Ω·cm,迁移率达到583.0cm^2/V·S,表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明,高质量的TiN薄膜材料被外延在Si衬底上.进一步在TiN/Si衬底上外延生长SrTiO3薄膜的结果表明,在Si上外延的TiN薄膜不仅具有很好的热稳定性,而且可以作为缓冲层或底电极外延生长其他的薄膜材料及多层结构.

英文摘要：

TiN thin films have been successfully epitaxially grown on Si substrates by laser molecular-beam epitaxy using the two-step method. The thin film has a smooth surface with a root-mean-square roughness of 0. 842 nm over a 10μm ×10μm area. Hall measurement shows that the resistivity of the TiN film is 3.6×10^-5Ω·cm and the mobility is up to 583.0 cm^2/V·S at room temperature, which implies that TiN thin film is an excellent electrode material. The X-ray diffraction （XRD） 0-20 scan result together with the very high mobility show that the TiN film has high quality. The result that SrTiO3 thin film can be subseguently epitaxially grown on TiN/Si substrate indicates that the TiN thin film on Si substrate not only has good thermal stability, but also can be used as buffers or bottom electrode for epitaxial growth of other thin films or multilayer films.