中文摘要：

分别以P型体硅和P型薄膜微晶硅为阳极，以掺入MEH—PPV的PFO为发光层，以透明金属Sm／Au为阴极，制作了顶发光白光器件。器件结构是：硅阳极／PEDOT-PSS／MEH-PPV：PFO／Cs2C03／Sm／Au。通过调节MEH-PPV在PFO中的质量百分比，改进了白光器件的发射色度。当MEH-PPV的质量百分比为0．13％时，发光在白光范围，CIE色坐标为（0．372，0．391）。研究了器件发光效率对体硅阳极电阻率的影响，当体硅阳极电阻率为0．079Ωcm时，器件电流效率和功率效率都达到极大，分别是0．191cd／A和0．131lm／W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极，通过调节Ni层厚度，优化器件效率。当Ni层厚度为2nm时，薄膜硅阳极器件的电流效率和功率效率分别达到最大值：0．371cd／A和0．187lm／W,相对于最佳电阻率体硅阳极器件分别提高了94％和43％。

英文摘要：

Polymer white light-emitting diodes （PWLEDs） with p-type Si and nanometer-thick （-10 nm） polycrystalline p-Si anode are reported. The structures of the PWLEDs are Si anodes/ PEDOT：PSS/ MEH-PPV： PFO/CsaCO3/ Sin/ Au. PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer. It is found that when MEH-PPV is 0.13%, the PWLEDs show white emission with CIE coordinates of （0.372, 0.391）. The optimized p-Si anode resistivity of the PWLEDs is investigated. When the resistivity of p-Si is 0.079 I＇~.cm, a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained. Furthermore, polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer, the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm. In comparasion with PWLEDs with p-Si anode, the maximum efficiency has raised 94% and 43% respectively.