中文摘要：

在抛光的p型单晶硅上通过扩散工艺制备pn结,采用此种硅片利用阳极腐蚀法制备多孔硅（PS）。用磁控溅射镀膜机在有pn结的单晶硅表面镀上一层TiO2纳米结构薄膜,并用表面光电压谱（SPS）研究了n-PS/p-PS/Si和TiO2/n-Si/p-Si的表面光伏特性。结果表明TiO2/n-Si/p-Si和n-PS/p-PS/Si的光伏效应比n-Si/p-Si在不同程度上有所提高。在300～600℃热处理温度范围内TiO2/n-Si/p-Si的光伏效应随温度的升高而增强,600～800℃范围内随温度的升高而降低。

英文摘要：

diffuse processes on the p-type single crystal silicon produced the pn junction. Porous silicon （PS） was prepared by using oxidation etching on the surface of the single crystal with pn junction. A quantum-sized thin film of TiO2 was deposited by reactive magnetron sputtering on the pn junction. The results obtained by the surface photovoltage spectroscope （SPS） showed that the photovoltage of TiO2/n-Si/p-Si and n-PS/p-PS/Si increase than the photovoltage of n-Si/p-Si. In 300-600℃, the photovoltage of TiO2/n-Si/p-Si was enhancing with the rise of temperature. In 600-800℃ ,the the photovoltage of TiO2/n-Si/p-Si was reducing with the rise of temperature.