中文摘要：

用快扩散方式把Zn^2＋掺入到单晶硅中，再用阳极电化学腐蚀方法把样品腐蚀成多孔硅。利用荧光分光光度计测试了样品的光致发光特性，结果表明Zn^2＋的扩散增强了多孔硅的荧光发射，并分别利用扫描电镜和傅里叶变换红外光谱仪研究了多孔硅薄膜的表面形态和样品的红外吸收光谱。

英文摘要：

Zn^2＋ ions have been doped into single-crystalline silicon making use of quick diffusion method. Fluorescence photospectrometer has been used to analyze the photoluminescence properties of the samples which are fabricated by anode electrochemical etching,and the results show that the luminescence intensity of porous silicon is increased after Zn^2＋ diffusion. Moreover, the surface morphology of the samples and FTIR absorption spectra have been investigated by means of scanning electron microscope and Fourier transform infrared spectroscopy.