通过传统工艺制备出Ba-BSi玻璃相掺杂的Zn-V-Sb基压敏电阻材料,研究了其微观结构及性能。结果表明,Ba-BSi玻璃相的掺杂能降低Zn-V-Sb基压敏电阻试样的烧结温度,玻璃相中B2O3的含量过多,会使ZnO压敏电阻材料的伏安(V-I)特性变差;而Ba^2+含量的增加,使ZnO压敏电阻材料的非线性系数上升。
Zn V-Sb based varistor ceramics doped with Ba-B-Si frits were prepared and the microstructure and properties were investigated. The results revealed that the sintering temperatures of Zn-V-Sb based ceramics would decline with doping Ba-B-Si frits. The V-I properties of samples got worse with extra B2O2 ,while nonlinearity exponent of Zn-V-Sb ceramics rised with ascension of BaO.