中文摘要：

采用射频磁控溅射技术在石英衬底上制备ZnO∶In薄膜，以N离子注入的方式进行N掺杂,通过优化退火条件成功实现了ZnO∶In-N薄膜的p型转变。研究发现：在590 ℃退火20 min获得性能良好的p-ZnO∶In-N薄膜，其空穴浓度、迁移率和电阻率分别为（1.01×1018） cm-3、3.40 cm2·V-1·s-1、1.81 Ω·cm。结合XPS分析认为ZnO∶InN实现p型导电正是由于In的掺入与受主N形成了有利于p型导电的受主InZn-2NO复合体。Hall跟踪测试发现p型导电会随时间变化而最终转变为n型导电，结合XPS和第一性原理计算认为薄膜中存在残余应力和（N2）O施主缺陷是p型不稳定的原因。

英文摘要：

The p-type of In-N codoped ZnO have been fabricated via radio frequency magnetron sputtering technology together with the N-implantation and annealing. The ZnO ： In-N film annealed for 20 min at 590 C exhibited good p type conductive nature with hole concentration of 1.01× 10^18 cm ^-3 , Hall mobility of 3.40 cm2 · V^-1 · s^-1 and low resistivity of about 1.81 Ω · cm. X-ray pho- toelectron spectroscopy （XPS） indicated that In and N were easily formed the shallower acceptor Inz, ＋2No complex which was the main factor of the p-type conversation. Hall measurements found that the p-ZnO ： In-N film degenerated into n-type after a preser- vation time. Combined XPS with the first-principles calculation, the instability in p-ZnO ： In-N mainly originate from the evolution of （N2）O donor defect together with the residual stress.