中文摘要：

ZnO因其价格便宜、无毒等优点,最有希望替代昂贵的掺锡氧化铟ITO,但未掺杂ZnO是高阻材料,如何提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。其中,Ga掺杂是提高ZnO性能的一种有效手段。从制备方法、掺杂浓度、生长条件等方面综述了Ga掺杂ZnO（GZO）薄膜光电性能的研究进展,归纳总结后发现：适当增加掺杂量、提高衬底温度等都有利于薄膜光学和电学性能的提高。目前,GZO薄膜电阻率最低可达10-3～10-4Ω.cm,透光率一般可达80%以上,光电性能可以满足透明导电膜的要求,但其性能的稳定性还不如广泛使用的ITO。因此,GZO薄膜要达到实际应用要求,尚需进一步优化工艺,提高其性能的稳定性。

英文摘要：

Due to cheapness and non-toxicity, ZnO is regarded as a potential tentative transparent conductive oxide （TCO） to expensive ITO. But undoped ZnO film exhibits high resistivity. Thereby, how to enhance its electrical and optical properties is a key for its application. Gallium doping is an efficient way to improve the properties of ZnO. The recent progress of the studies on Ga-doped ZnO （GZO） thin films based on the factors, such as the prepreparation methods, doping concentration and growth conditions to affect the optical and electrical properties of the films, are summarized. It is found that appropriate increase of the doping Concentration and substrate temperature are favorable to improve the electrical and optical properties of the GZO films. Up to now, the lowest electrical resistivity of GZO is from 10-31-1 · cm to 10-4fI · cm, and the average transmittances in the visible range is usually larger than 80% , implying the properties of GZO can meet the need of TCO films and be applied as a potential material for transparent electrodes. But the optical and electrical properties of the GZO films are not as stable as the widely applied ITO. In order to meet the actual application requirements, the fabrication process of GZO films should be optimized and the stability should be improved.