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Intersubband absorption in strained AlGaN/GaN double quantum wells
ISSN号:0921-4526
期刊名称:Physica B: Condensed Matter
时间:0
页码:3640-3645
相关项目:应变及压力调制下半导体多层异质结构材料中的电子态
作者:
Ha, S. H.|Ban, S. L.|Zhu, J.|
同期刊论文项目
应变及压力调制下半导体多层异质结构材料中的电子态
期刊论文 22
会议论文 1
同项目期刊论文
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Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well wi
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Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an el
压力下应变纤锌矿有限厚势垒异质结中杂质态的结合能
Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells
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Quantum confined Strak effect on intersubband transition in strained wurtzite nitride quantum wells
Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells
Intersubband absorption in strained AlxGa1-xN/GaN quantum wells with InyGa1-yN nanogroove layers
有限厚势垒量子阱中杂质态结合能
Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN qu
Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double
Pressure influence on bound polarons in a strained wurtzite GaN/Al_xGa_(1_x)N heterojunction under an electric field
Property comparison of polarons in zinc-blende and wurtzite GaN/AIN quantum wells