通过测量外加电压下电光晶体的相位延迟来获取半波电压.基于双折射晶体劈的偏光干涉法,将通过电光晶体后的偏振光相位延迟量转化为干涉条纹的平移,通过定位暗纹位置进行精密的线性测量.实验结果表明:偏光干涉法测量铌酸锂晶体相位延迟的测量准确度为4.4×10-3rad,所测量铌酸锂晶体的半波电压为480.0V,其测量误差为0.10%,远小于极值法0.96%的测量误差.偏光干涉法光路结构简单、测量准确度高、测量结果不受光功率波动的影响,且电光晶体相位延迟量的测量范围不受限制.
The hal&wave voltage was obtained by measuring the phase retardation of the electro-optic crystal under the applied external voltage. Based on polarization interference of birefringent crystal, phase shift of polarized light is transferred to the movement of interference fringes, and the linear accurate measurement is complemented by locating dark fringes position. The experimental results indicate that the accuracy of phase retardation of lithium noibate crystal is 4.4 X 10-~ rad, the hal&wave voltage that LN crystal is measured as 480.0 V with experimental error o5 0.10%. Compared with the experimental error of 0.96~ that hal&wave voltage is measured by extremum method, the measuring error of polarization interferometry method is reduced obviously. The optical structure of polarization interferometry method is simple with high measuring accuracy, the measurement result is insensitive to the power fluctuation of the light source and the measurement range of phase retardation of electro-optic crystal can be largely expanded.