采用固相法,通过预先引入Ti离子空位进行电荷补偿,成功制各了不同种类3价稀土离子掺杂钛酸锶陶瓷Re0.02Sro.98Ti0.99503(Re-sT,Re=La,Sm,Er)。X射线衍射仪分析表明Re-sT陶瓷具有和纯钛酸锶(SrTi03,ST)类似的单一立方钙钛矿结构,从实验上证实了预设占位离子空位进行电荷补偿的可行性。扫描电子显微镜分析发现稀土离子掺杂有效地抑制了晶粒的生长。采用HP4294、HP4284精密阻抗分析仪、JJC9906-A介电强度测试仪以及FMRL偏压测试系统对Re-sT陶瓷的介电性能进行了测试,研究了不同种类稀土离子掺杂对Re-sT陶瓷介电性能的影响。结果表明:Re-sT陶瓷的室温相对介电常数(εr=2520~3800,1la-iz)比sT陶瓷的(εr=300,IkHz)增加了近10倍以上,而介电损耗仍保持在O.05(1kHz)以下;在-50~180℃,Re—sT陶瓷的介电常数具有较好的稳定性;Re-sT陶瓷的介电强度凰均在13kV/mm以上;在O~1.6kV/mm的偏压测试条件下,Re-sT陶瓷的相对介电常数变化在±lO%以内。基于Re-ST陶瓷具有高的卧相对较高的玩以及较好的温度特性与偏压特性,其在中高压固态高密度储能介质材料应用领域有着较大的发展前景。
By introducing Ti vacancies in advance for charge compensation, trivalent rare earth doped strontium titanate ceramics with the formula Re0.02Sr0.98Tio.99503 (Re-ST, Re = La, Sin, Er) were prepared via a solid reaction route. The analysis by X-ray diffraction shows that Re-ST ceramics have a cubic perovskite structure as pure ST. It is experimentally demonstrated that the introduction of B-site vacancies in advance for charge compensation is available, and the rare earth doping effectively inhibites the grain growth. The dielectric properties of Re-ST ceramics were measured by RP4294/I-IP4284 precision impedance analyzer, JJC9906-A breakdown strength testing instrument and FMRL bias voltage testing system as well. The effect of rare earth doping on the dielectric properties of Re-ST ceramics was investigated. The results show that the room temperature-dependent dielectric constant of Re-ST ceramics (εr= 2 520-3 800, 1 kHz) increases more than 10 times greater than that of pure ST ceramic (εr= 300, 1 kI-Iz), while the dielectric loss of Re-ST ceramics still remains lower than 0.05 (1 kHz). The er of Re-ST ceramics shows a better stability from -50 to 180 ℃. The breakdown strength of Re-ST ceramics is higher than 13 kV/mm. Under 0-1.6 kV/mm bias voltage testing conditions, the er of Re-ST ceramics changes within ±10%. Based on the higher relative dielectric constant, higher breakdown strength, temperature and bias voltage characteristics, Re-ST ceramics have promising prospects in the applications of medium/high-voltage solid state dielectric materials with high energy storage densities.