中文摘要：

一台新奇设备，由在充分弄空的 SOI 电影上制作的透明电极(LPIN PD-GTE ) 的侧面的大头针光电二极管 gated 被建议。ITO 电影作为门电极在设备被采用减少轻吸收。薄 Si 电影充分在门电压下面被弄空完成低黑暗电流和高 photo-to-dark 电流比率。门电压的模型被获得，数字模拟被地图集介绍。在黑暗(黑暗电流) 和不到 570 nm 照明(相片电流) 中获得的 LPIN PD-GTE 的当前电压的特征被学习从 2 ～ 12 m 为活跃隧道长度完成最大的 photo-to-dark 电流比率。结果证明 photo-to-dark 电流比率是 2.0 ? 牦吗？

英文摘要：

A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.