阐述了基于GaNHEMT的宽带平衡功率放大器的设计与实现方法:采用Lange耦合器构建平衡功率放大器结构,采用多节阻抗匹配技术设计输入/输出匹配网络,实现功放宽带特性(I.5~3.5GHz);采用与Si热膨胀系数接近的A1SiC散热载片,克服管芯与载片热稳定系数不同引起的热稳定问题,并采用脉冲工作模式进一步减小功放发热量.制作实际功放模块用于测试,在1.5—3.5GHz频带内,功放线性增益大于12dB,增益平坦度为±0.4dB,饱和输出功率大于8W,漏极效率为56%~65%。实验测试结果与设计仿真结果有较好一致性,验证了设计方法的正确性.
In this paper,the design and implementation of a broadband balanced power amplifier(PA)using a GaN transistor is presented. Two Lange couplers are used for a balanced PA configuration,and two multi-section matching networks are used in both input and output ports to improve the bandwidth of PA. The carrier sheet is made of AISiC whose thermal expansion coefficient is close to silicon's,and the power amplifier operates in a pulse mode in order to reduce the heat dissipated on it.By bi- asing the amplifier at V_ DS = 28V, I_ DS = 110mA, the measurement results show 12 - 13 dB linear gain and 56 % - 65 % drain ef- ficiency in the 1.5 - 3.5GHz frequency range. Moreover, an output power higher than 8W is maintained over the band.