中文摘要：

在超高真空化学气相沉积设备上,利用低温生长的硅锗和锗作为缓冲层,在SOI衬底上成功外延出高质量的锗薄膜.基于谐振腔增强型探测器（RCE）理论,模拟优化了有源层和上下反射层的厚度尺寸.传输矩阵方法计算结果显示：将SOI衬底自有二氧化硅、硅层作为一对下反射层的情况下,取2对SiO_2/Ta_2O_5作为上反射层时,量子效率可以达到接近56%.制作的SOI基锗光电探测器,暗电流密度为0.65 m A·cm-2.在8 V的偏压下,探测器在1 550 nm处响应度1.45 m A·W-1,可以观察到探测器的共振现象.

英文摘要：

Tensily strianed Ge thin films are successfully grown on SOI substrates by the UHV-CVD.The Ge layer are characterized with high quality. Based on the theory of resonant cavity enhanced detector（ RCE）,the before and after DBR mirror and absorption layer thickness has been optimized designed. The simulation results show that： when the original SOI substrate silica/silicon works as a lower mirror,and the bottom mirror is 2 pairs of SiO_2/Ta_2O_5,quantum efficiency can reach near 56%.Based on the optimal theoretical results,a SOI based germanium photodetector has fabricated,and the dark current density of the device is 0. 65 m A·cm-2. The responsivity of the SOI-based RCE-MSM photodectors is 1. 45 m A·W-1 at 1 550 nm and -8 V. The resonant effect can be observed.