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The study of the optical properties of the GaAs with point defects
  • ISSN号：0030-4026
  • 期刊名称：Optik
  • 时间：2014.4.5
  • 页码：419-423
  • 相关项目：对532nm敏感的GaAlAs光电发射机理及其制备技术研究
作者： Jing Guo, Benkang Chang, Mingzhu Yang, Honggang Wang, Meisha|
同期刊论文项目
对532nm敏感的GaAlAs光电发射机理及其制备技术研究
期刊论文 54 会议论文 5
同项目期刊论文
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Study of Cs adsorption on Ga(Mg)(0.75)Al0.25N (0001) surface: A first principle calculation
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Electronic structure of Zn doped Ga0.5Al0.5As photocathodes from first-principles
Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes
Resolution characteristics for reflection-mode exponential-doping GaN photocathode
Influence of Built-in Electric Filed on the Energy and Emergence Angle Spreads of Transmission-mode
Theoretical study on optoelectronic properties of Ga0.75Al0.25N (001) reconstruction surfaces,
Research on quantum efficiency formula for extended blue transmission–mode GaAlAs/GaAs photocathode
Study on the electron structure and optical properties of Ga0.5Al0.5As(100) beta(2)(2 x 4) reconstru
Geometric and electronic structure of Cs adsorbed Ga0.5Al0.5As (001) and (011) surfaces: a first pri
Photoemission characteristics of (Cs, O) activation exponential-doping Ga0.37Al0.63As photocathodes
Stability of negative electron affinity Ga0.37Al0.63As photocathodes in an ultrahigh vacuum system
First principles study on the influence of vacancy defects on electronic structure and optical prope
Roles of cesium and oxides in the processing of gallium aluminum arsenide photocathodes
The adsorption of Cs and residual gases on Ga0.5Al0.5As (001) beta(2) (2 x 4) surface: A first princ
Comparison of optical properties between Wurtzite and zinc-blende Ga0.75Al0.25N
Theoretical study on electronic and optical properties of In0.53Ga0.47As (100) beta 2 (2 x 4) surfac
First principles calculations of the electronic structure and optical properties of (001), (011) and
Cs adsorption on Ga0.5Al0.5As(001)beta(2) (2 x 4) surface: A first-principles research
Electronic structure and optical properties of nonpolar Ga0.75Al0.25N surfaces,
Theoretical research on optical properties and quantum efficiency of Ga1-xAlxN photocathodes.
Photoemission properties of GaAs(100) β2(2×4) and GaAs(100)(4×2) reconstruction phases.
Research on quantum efficiency of reflection-mode GaAs photocathode with thin emission layer.
Quantum efficiency study of the sensitive to blue-green light transmission-mode GaAlAs photocathode.
指数掺杂反射式GaAlAs和GaAs光电阴极比较研究
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Research on electronic structure and optical properties of Mg doped Ga0.75Al0.25N
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GaN(0001)表面电子结构和光学性质的第一性原理研究
Numerical Calculation Method of Modulation Transfer Function for Preproximity Focusing Electron-opti
透射式蓝延伸GaAs光电阴极光学结构对比.
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Effect of Cs adsorption on the photoemission performance of GaAlAs photocathode
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Resolution properties of transmission-mode exponential-doping Ga0.37Al0.63As photocathodes.
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大面积MCP-PMTK2CsSb光电阴极理论与测控技术研究
超高真空系统中GaAlAs光电阴极的重新铯化研究
梯度掺杂GaN光电阴极的光谱响应测试与分析
透射式蓝延伸GaAs光电阴极光学结构对比
负电子亲和势GaN阴极光电发射机理研究
微通道板电子输运特性的仿真研究