中文摘要：

83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors（PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported,including a maximum saturation current density Idss of 894 mA/mm,a maximum extrinsic transconductance gm,maxof 1640 mS/mm,an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of392 GHz which were based on the measured S-parameters from 1 to 110 GHz.The minimum noise figure(NFmin)measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of17 mA.These results were obtained by the combination of increased InAs mole fraction in the channel,gate size scaling,parasitic reduction and the quantization channel.These excellent results make it one of the most suitable devices for millimeter wave（MMW） low noise applications.

英文摘要：

83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.