中文摘要：

90-nm T-shaped gate InP-based In0.52Al0.48As/In0.6Ga0.4As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μm.DC,RF and small-signal model characterizations were demonstrated.The maximum saturation current density was measured to be 755 mA/mm biased at Vgs=0.6 V and Vds=1.5 V.The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at Vds=—0.1V and Vds=1.5 V.The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,respectively.The inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 GHz.The smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.

英文摘要：

90-nm T-shaped gate InP-based In_（0.52）Al_（0.48）As/In_（0.6）Ga_（0.4）As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μm.DC,RF and small-signal model characterizations were demonstrated.The maximum saturation current density was measured to be 755 mA/mm biased at V_（gs）=0.6 V and V_（ds）=1.5 V.The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_（ds）=—0.1V and V_（ds）=1.5 V.The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,respectively.The inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 GHz.The smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.