设计了一种基于体硅加工技术的单敏感质量元差分电容式二维加速度传感器,并采用硅一玻璃静电键合、ICPT艺释放等技术完成T-维加速度传感器的加工。测试结果表明:该二维加速度传感器两个检测方向上的灵敏度基本一致.线性度较好,交叉干扰较小。x、l,方向的灵敏度分别为58.3mV/gn、55.6mV/gn;线性相关系数分别为0.9968、0.9961,交叉灵敏度分别为6.17%、7.82%。
A capacitive biaxial microaccelerometer with a single proof mass is implemented. The sensor is fabricated by silicon-on-glass bulk silicon micromachining successfully, where the ICP etching and the anodic bonding process are utilized. The experimental results indicate the biaxial accelerometer with uniform axial sensitivities, good linearity and high cross-axis sensitivity immunity to the z-axis input. The sensitivity of the x direction is 58.3 mV/gn and y is 55.6 mV/gn ,the linear correlation coefficient of the x direction is 0. 9968 and y is 0. 9961 ,as well as the cross-axis sensitivity of the x direction is 6.17% and y is 7.82%.