中文摘要：

硅片直径的不断增大，特征线宽的不断减小，吸除器件有源区域内的金属杂质至关重要。传统的内吸杂已经不能完全满足器件工艺的要求，因此快速热处理技术被引入到直拉硅片的内吸杂工艺中。快速热处理可以使空住在硅中按深度分布，在后续的热处理中促进氧沉淀的形成，从而得到理想的清洁区和氧沉淀密度。探索快速热处理的条件以达到良好的内吸杂效果，具有重要的实用意义。

英文摘要：

It is very important to getter metal impurities in the active region of devices with the increase of silicon wafer diameter and minimum of feature size. Conventional intrinsic gettering （IG） technology cannot meet the demand of device process, so rapid thermal process （RTP） is introduced. A vacancy depth profile into the wafer was obtained by the RTP pre - annealing and Perfect DZ on the surface of wafers and high density oxygen precipitation in the bulk of wafers form after the following annealing, It is significant in application to investigate the RTP conditions, such as temperature, time, ambient, the cooling speed etc.