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Model relation between the energy-band edge and the Fermi level of the nondegenerate semiconductor T
  • 期刊名称：Phys. Rev. B
  • 时间：0
  • 页码：235109-1-235109-8
  • 语言：英文
  • 相关项目：合成气制碳二含氧化物的密度泛函理论研究
作者： Wei-Xue Li |Can Li|Guo-Ling Li |
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合成气制碳二含氧化物的密度泛函理论研究
期刊论文 17 会议论文 8
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