中文摘要：

提出了一种利用体微机械加工技术制作的硅四层键合高对称电容式加速度传感器.采用硅/硅直接键合技术实现中间对称梁质量块结构的制作，然后采用硼硅玻璃软化键合方法完成上、下电极的键合.在完成整体结构圆片级真空封装的同时，通过引线腔结构方便地实现了中间电极的引线.传感器芯片大小为6.8mm×5.6mm×1.68mm，其中敏感质量块尺寸为3.2mm×3.2mm×0.84mm.对封装的传感器性能进行了初步测试，结果表明制作的传感器漏率小于0.1×10^-9cm^3/s，灵敏度约为6pF/g，品质因子为35，谐振频率为489Hz.

英文摘要：

This paper presents a highly symmetrical capacitive accelerometer fabricated by four silicon wafers bonded together. The cantilever-mass structure is fabricated by bonding two wafers together by silicon fusion,and the two static electrodes are bonded later by low-temperature glass melting. Through the silicon bonding, we achieve a wafer-level vacuum package, and the wire-bonding PAD is made after the fabrication is complete. The dimensions of the chip are 6. 8mm × 5.6mm × 1.68mm,and those of the mass are 3.2mm × 3. 2mm × 0. 84mm. The test results of the sensor show that the sensitivity is about 6pF/g,the Q value is 35, the resonant frequency is 489Hz,and the leakage is less than 0.1 × 10^-9 cm^3/s.