中文摘要：

<正>The refractive index of as-evaporated amorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible.Upon successive treatment with annealing and non-saturation irradiation and further annealing,the refractive index of the as-evaporated amorphous semiconductor As2S8 film reaches a maximum value and then its reversibility occurs upon annealing.The annealing of the amorphous semiconductor As2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment,accompanied by a decrease of film thickness.The As2S8 planar waveguide after annealing（130℃） and saturation irradiation and annealing（130℃） shows a good propagation characteristic with ca.0.27 dB/cm low propagation loss of the 632.8 nm guided mode.

英文摘要：

The refractive index ofas-evaporatedamorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradiation and further annealing, the refractive index of the as-evaporated amorphous semiconductor As2S8 film reaches a maximum value and then its reversibility occurs upon annealing. The annealing of the amorphous semiconductor AS2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment, accompanied by a decrease of film thickness. The As2S8 planar waveguide after annealing （130 ℃） and saturation irradiation and annealing （130 ℃） shows a good propagation characteristic with ca, 0.27 dB/cm low propagation loss of the 632.8 nm guided mode.