在在房间温度的可见范围的多孔的硅 microcavities (PSM ) 的光致发光(PL ) 性质被做稀土元素镱(Yb ) 进电气化学的蚀刻方法准备的 PSM 改进。与稀土元素做的 PSM 在 630 nm 附近有一个排放乐队,这被观察。与单个层的多孔的硅(PS ) 相比拍摄,与 Yb 做的 PSM 有更狭窄、更强壮的 PL 光谱。
The photoluminescence(PL) properties of porous silicon microcavities(PSMs) in the visible range at room temperature are improved by doping the rare earth ytterbium(Yb) into PSMs prepared by the electrochemical etching method.It is observed that PSMs doped with the rare earth have an emission band around 630 nm.Compared with the single-layer porous silicon(PS) film,the PSMs doped with Yb have narrower and stronger PL spectrum.