文章介绍GaN材料作为核探测器的潜在优势和国内外的研究状况,并概要综述GaN材料外延的主要技术、特点及其最新发展。通过模拟计算,总结了使用GaN制备核探测器对材料的基本要求。同时,根据目前的研究现状,提出了在GaN材料生长和器件制作方面存在的主要技术问题及其解决方向。
The research progress of GaN nuclear detectors and their potential application advantages in the world were introduced.Several popular growth technologies of GaN films and their characteristics were described.Through theory simulation and calculation,the qualifications of GaN films for nuclear detectors were discussed.Based on the current research situation of the GaN,some problems and their solutions to the film growth and detectors fabrication were proposed.