中文摘要：

使用GaN基材料制备了PIN结构核辐射探测器,研究了探测器对X射线响应的多方面性能。在没有X射线照射时,探测器具有很小的漏电流,在-10 V时小于0.1 nA。对探测器的X射线的响应时间特性进行了分析和模拟,给出了很好的物理机制解释。研究了信噪比随外加偏压的变化,并得到了最佳信噪比对应的工作电压为-20 V。

英文摘要：

GaN-based PIN radiation detectors were fabricated,and various response properties of the detectors under X-ray irradiation were studied.In the absence of X-ray irradiation,the detectors have very low leakage current less than 0.1 nA at-10 V.Time response of the detectors to X-ray was analyzed and simulated,following a reasonable interpretation of the physical mechanism.The relationship between signal to noise ratio（SNR） and applied bias was investigated,and an optimum voltage of-20 V corresponding to the best SNR was found.