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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
  • ISSN号：1369-8001
  • 期刊名称：Materials Science in Semiconductor Processing
  • 时间：0
  • 页码：108-113
  • 语言：英文
  • 相关项目：复合半导体纳米材料构筑与体异质结太阳能电池研究
作者： Jin, Lan|Wang, Zhanguo|Qu, Shengchun|Zhou, Huiying|
同期刊论文项目
复合半导体纳米材料构筑与体异质结太阳能电池研究
期刊论文 33 会议论文 5 专利 3
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