Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon
- ISSN号:1674-4926
- 期刊名称:《半导体学报:英文版》
- 时间:0
- 分类:TN304.055[电子电信—物理电子学] O484.1[理学—固体物理;理学—物理]
- 作者机构:[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, [2]National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China
- 相关基金:Project supported by the State Key Development Program for Basic Research of China (No. 2006CB202604), the National Natural Science Foundation of China (Nos. 60576036, 50773085, 60736034), and the National High Technology Research and Development Program of China (No. 2006AA05Z405).
关键词:
等离子体增强化学气相沉积, PECVD法, 氢化非晶硅, 光电导谱, 复合膜, 电子迁移率, 锌酞菁, 材料组成, zinc phthalocyanines, a-Si:H, photoconductivity, mobility-lifetime product
中文摘要:
Corresponding author. Email: xbzeng@semi.ac.cn