中文摘要：

构造了由普通材料A（Si02）和电单负材料B组成的（AB）^N（BA）^N型一维光子晶体．数值计算表明原禁带的1907．3nm处出现了一个十分尖锐的隧穿模．入射角增加，该隧穿模的透射率和半峰全宽度均保持不变，但位置发生蓝移，入射角在15°-65°的区间内，移动率的绝对值｜dλ/dθ｜较大．当B介质的磁导率肛B从5增加到10时，只是隧穿模的位置发生了红移．介质的几何厚度增加时，隧穿模的透射率不变，但其位置红移明显，半峰全宽略有增加．

英文摘要：

Abstract An （AB）^N（BA）^N-type one-dimensional photonic crystal is made from common material A（SiO2） and electric single-negative material B. Numerical calculation results indicate that there is a very sharp tunneling model at 1907.3 nm of the original band. When the incident angle 0 increases, the transmittance and the full-width half-maximum of the tunneling mode remains the same, but its position is blue shifted. The value of ｜dλ/dθ｜turns larger when the incident angel is in a range from 15° to 65°. When permeability of B medium P.B increases from 5 to 10, the position of the tunneling model is only red shifted. When geometric thickness of the dielectric increases, the transmittance of the tunneling model remains unchanged, but its position is red shifted obviously and its full-width half-maximum increase slightly.