为探讨含磁单负材料光子晶体的偏振特性,构造了由普通材料A(SiO2)和磁单负材料B组成的(AB)3(BA)3对称型一维光子晶体。数值计算结果表明,垂直入射时,原禁带的1907nm处出现了一个十分尖锐的隧穿模。对TE波,入射角θ增加、B介质的介电常数εb或几何厚度减少时,禁带边缘蓝移,宽度变窄,隧穿模的透射率和半峰全宽保持不变,但其位置蓝移。上述3个参数分别变化时,TM波的透射谱及隧穿模的变化规律与TE波的相同,只是入射角增加时,TM波禁带长波边缘的蓝移量小于TE波的。隧穿模的这些偏振特性对高品质滤波器的设计具有指导意义。
In order to study the polarization properties of photonic crystals containing magnetic single- negative materials, an (AB)3(BA)3 symmetrical structured one-dimensional photonic crystal was constructed from common material A (SiO2) and magnetic single-negative material B. Numerical calculation results indicate that at the normal incidence, there is a very sharp tunneling model at 1 907 nm of the original band. For TE wave, when the incident angle θ increases, the permittivity εB or the geometry thickness variation of B medium decreases, blue-shifts are observed with the edge of band gap. The width of the tunneling mode is narrowed, the transmittance and the full-width half-maximum does not change, but its position blue shifts. When the above three parameters change respectively, the transmission spectra and the tunneling mode of TM wave change as same as TE wave's. Only when the incident angle increases, the blue shift of long-wave edge of TM wave band is less than TE wave' s. It is helpful for designing high-quality filter.