中文摘要：

采用高温固相法在弱还原的气氛下合成了Sr2SiO4高亮度的黄色长余辉材料。通过X射线衍射（XRD）分析发现所制得的样品属于α′-Sr2SiO4斜方晶系结构;样品的光致发光特性表明,在320nm激发光的照射下,出现峰位为490nm的宽带发射峰。样品余辉特性显示：样品的余辉衰减曲线符合双指数衰减。在温度293～598K内样品有4个热释光峰,峰值温度在346,420,457和552K附近。不同的等待时间热释光曲线表明：在衰减过程中,热释光峰位置发生移动,显示材料中存在缺陷能带;同时不同深度的陷阱能级衰减规律不同,表明了陷阱能级之间存在电子转移现象。

英文摘要：

r1.97SiO4∶Eu02.＋03phosphors were synthesized through the solid-state reaction technique.The X-ray diffraction showsthat the phase of the phosphors is orthorhombicα′-Sr2SiO4.The produced phosphors show one intense emission band located at490nm.The phosphor shows a long afterglow properties excited by the sunlight.The decay characteristics show that the phos-phors consist of a quick decay process and a slow decay process.The experimental results demonstrate that the thermolumines-cence（TL）curves of the samples containing four peaks,located at 346,420,457and 552K,respectively.Meanwhile,the dif-ferent peaks show the different decay characteristics,and the electron transfer between the trap levels was measured.