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Can cation vacancy defects induce room temperature ferromagnetism in GaN?
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.2.11
  • 页码：062411-
  • 相关项目：基于碳化硅晶体色心的自旋单量子态构筑和测量的理论模拟
作者： Mingwen Zhao|Tao He|Zhenhai Wang|Liangdong Liu|
同期刊论文项目
基于碳化硅晶体色心的自旋单量子态构筑和测量的理论模拟
期刊论文 34
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