中文摘要：

采用射频反应溅射法于室温下在Cu/Ti/SiO2/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明, 室温下制备的氧化钒薄膜除微弱的V2O5 （101）和V2O3 （110）峰外, 没有明显的结晶取向, 是VO2, V2O5, V2O3及VO的混合相薄膜, 且薄膜表面颗粒大小均匀, 表面均方根粗糙度约为1 nm. 采用半导体参数分析仪对薄膜的电开关特性进行测试. 结果表明薄膜具有较低的开关电压（VSet〈1 V, VReset〈-0.5 V）, 并且具有稳定的可逆开关特性. 薄膜从低阻态转变为高阻态的电流（IReset）随限流的增大而增大.通过高低阻态时I-V对数曲线的拟合（高阻态斜率〉1, 低阻态斜率=1）, 认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制.

英文摘要：

Vanadium oxide thin films are deposited on Cu/Ti/SiO2/Si by reactive sputtering at room temperature. The crystal structure, component and surface morphology of VOx film are characterized by X ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy, respectively. These investigations reveal that there is no obvious crystal orientation except weak V2O5 （101） and V2O3 （110） peaks, and the film contains VO2, V2O5, V2O3 and VO mixture phase. The surface particle size of the film is uniform with a root mean square roughness of 1 nm. The resistive switching properties of VOx thin film are tested by semiconductor device analyzer （Agilent B1500A）. The I-V characteristics of the VOx memory cell reveal that the cell has low switch voltage （VSet〈1 V, VReset〈0.5 V） and the stable reversible switching characteristic. The current of the film changing from low resistance state to high resistance state （IReset） increases with current compliance increasing. The double-logarithmic plots of the I-V curve for the high and low resistance state show high configuration slope 〉1 and low resistance state slope=1. It is confirmed that the copper ion diffusion and the formation of conduction filaments may be the resistance switching mechanism of the VOx/Cu structure.