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层状二硫化钼研究进展
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：O472.3[理学—半导体物理;理学—物理] TN304.21[电子电信—物理电子学]
  • 作者机构：Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering,Tianjin University of Technology, Tianjin 300384, China
  • 相关基金：supported by the National Natural Science Foundation of China（Nos.61274113;11204212 and 61404091）; the Program for New Century Excellent Talents in University（No.NCET-11-1064）; the Tianjin Natural Science Foundation（Nos.13JCYBJC15700;13JCZDJC26100;14JCZDJC31500 and 14JCQNJC00800）; the Tianjin Science and Technology Developmental Funds of Universities and Colleges（Nos.20100703;20130701 and 20130702）
作者： 顾品超, 张楷亮, 冯玉林, 王芳, 苗银萍, 韩叶梅, 张韩霞
关键词： 金属有机化学气相沉积, 氧化铟薄膜, 退火温度, 光学带隙, 蓝宝石衬底, 电学性质, 结构, MOCVD, Annealing, Energy gap, Hall mobility, Indium, Metallorganic chemical vapor deposition, Organic chemicals, Organometallics, Sapphire, Substrates, X ray diffraction analysis
中文摘要：

铟氧化物(在 2 O 3) 电影在艾尔 2 在 700 点的 O 3(0001 ) 底层 ??????? L

英文摘要：

Indium oxide（In_2O_3） films were prepared on Al_2O_3（0001） substrates at 700 °C by metal-organic chemical vapor deposition（MOCVD）.Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction（XRD） analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm~2·V~（-1）·s~（-1）.The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876