中文摘要：

利用分子束外延法在MgO（100）衬底上制备Bi2.1CaySr1.9-yCuO6＋δ薄膜。薄膜的结构、外延性、化学计量比及表面形貌通过X射线衍射仪、X射线能谱仪及扫描电子显微镜表征,薄膜的R-T曲线通过标准四引线法测量。结果表明,Bi2.1CaySr1.9-yCuO6＋δ薄膜具有较好的结晶性能,沿衬底[001]方向c轴外延生长,且表面平整;随Ca含量（0.2≤y≤1.0）不同,Bi2.1CaySr1.9-yCuO6＋δ相的c轴长度发生变化,且薄膜显现不同的导电特性。

英文摘要：

The Bi2.1CaySr1.9-yCuO6＋δ thin films with c-axis oriented epitaxial were deposited on MgO （100） substrates by moleculor beam epitaxy （MBE） method. The film properties of structure, composition and surface morphology were investigated by X-ray diffraction （XRD）, X-ray energy dispersive spectrometry （EDS） and scanning electron microscopy （SEM）, respectively. Temperature dependence of resistance （R-T） was measured by the standard four-probe method. It demonstrates that the Bi2.1CaySr1.9-yCuO6＋δ thin films are fabricated owning a good crystalline quality, c-axis epitaxial growth and smooth surface. The c-axis length of Bi2.1CaySr1.9-yCuO6＋δ phase and the conductibility of thin films are varied with Ca doping （0.2≤y≤1.0）.