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高浓度臭氧在分子束外延法制备Bi系氧化物薄膜中的应用
  • 期刊名称:金属学报 Vol.44, No.6, pp647-651, Oct. 2008
  • 时间:0
  • 分类:TN405.984[电子电信—微电子学与固体电子学]
  • 作者机构:[1]东北大学理学院材料物理与化学研究所,沈阳110004, [2]东北大学材料各向异性与织构教育部重点实验室,沈阳110004
  • 相关基金:国家自然科学基金资助项目50572013
  • 相关项目:a,b轴外延生长Bi系高温超导薄膜的制备研究
中文摘要:

利用硅胶吸附解吸臭氧原理自制了臭氧浓缩装置,通过此装置制备的高浓度臭氧作为分子束外延制备Bi系氧化物薄膜的氧化源.在臭氧浓缩装置中,硅胶温度保持在-85℃左右,工作6h,可获得浓度(摩尔分数)高于95%的臭氧.当臭氧浓缩装置中压强保持在1.3×10^3Pa,该臭氧浓度可维持5h以上.X射线衍射结果表明,制备的高浓度臭氧在高真空条件下可将Cu氧化成CuO,并以此为氧化源利用分子束外延在MgO(100)衬底上制备了较高质量的Bi2Sr2CuO6+x和Bi2Sr2CaCu2O8+x薄膜.

英文摘要:

Using the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy (MBE) to prepare Bi based oxide thin fili:ns. The concentration (molar fraction) of ozone reached above 95% when the silica gel was kept at about -85 ℃ for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3 × 10^3 Pa. X-ray diffraction (XRD) demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high-quality Bi2Sr2CuO6+x and Bi2Sr2CaCu2O8+x thin films on the MgO (100) substrates by MBE.

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