利用硅胶吸附解吸臭氧原理自制了臭氧浓缩装置,通过此装置制备的高浓度臭氧作为分子束外延制备Bi系氧化物薄膜的氧化源.在臭氧浓缩装置中,硅胶温度保持在-85℃左右,工作6h,可获得浓度(摩尔分数)高于95%的臭氧.当臭氧浓缩装置中压强保持在1.3×10^3Pa,该臭氧浓度可维持5h以上.X射线衍射结果表明,制备的高浓度臭氧在高真空条件下可将Cu氧化成CuO,并以此为氧化源利用分子束外延在MgO(100)衬底上制备了较高质量的Bi2Sr2CuO6+x和Bi2Sr2CaCu2O8+x薄膜.
Using the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy (MBE) to prepare Bi based oxide thin fili:ns. The concentration (molar fraction) of ozone reached above 95% when the silica gel was kept at about -85 ℃ for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3 × 10^3 Pa. X-ray diffraction (XRD) demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high-quality Bi2Sr2CuO6+x and Bi2Sr2CaCu2O8+x thin films on the MgO (100) substrates by MBE.