中文摘要：

在12~300K的温度范围内研究了InSb薄膜（利用MBE生长）的磁阻效应随厚度的变化关系.实验发现厚的InSb薄膜只能产生半经典（∝B2）磁阻效应.而减小薄膜厚度,在薄的InSb薄膜中会更容易出现弱反局域化效应,从而造成在低温下（〈35K）出现了一个异常的随温度增加而迁移率降低的趋势.我们发现该弱反局域化效应可用HLN模型拟合,证明了它可能来源于二维（2-D）体系,比如InSb的界面态.

英文摘要：

We experimentally investigated the thickness-dependent magnetoresistance properties of InSb films in the temperature range of 12 x 300 K. The samples were grown on semi-insulating GaAs （100） substrates by molecular beam epitaxy （MBE）. It was observed that the thick InSb only can show the semi-classical B2 dependence magnetoresistance resulted from the Lorentz deflection of carriers. At the same time, we found that weak antilocalization （WAL） effect can be much enhanced by reducing the sample＇ s thickness （ with the thickness N 0.1 p,m）. The thin sample＇ s WAL magnetoresistance plot can be well fitted by Hikan-Larkin-Nagaoka （HLN） model, which demonstrates that the obseved WAL effect for thin InSb is with a 2-dimension character, which can be associated with the surface/interface states of InSb.