中文摘要：

采用等离子体增强化学气相沉积技术,以C2H2、H2和N2为反应气体,在镀Ni催化剂的Si基底上成功制备出多壁碳纳米管薄膜。采用扫描电镜研究了沉积温度对碳管形貌的影响,进一步通过扩散机制分析了多种形貌CNTs的生长机制。结果表明：沉积温度对催化剂的刻蚀和碳纳米管薄膜的形成起着决定作用,获得定向性良好、分布均匀、密度适中的碳纳米管的最佳温度是700℃。

英文摘要：

Muti-walled carbon nanotubes were prepared on Si substrates with Ni as catalyst by plasma enhanced chemical capor deposition technology using C2H2,H2 and N2 as reactive gas.The effect of depositing temperature on the structure of carbon nanotubes and growth mechanisms were deeply analyzed by SEM.The results indicated that the depositing temperature plays important role in etching of catalyst and morphology of carbon nanotubes,the optimum depositing temperature of muti-walled nantubes with vertical arrangement,uniform distribution and moderate density is 700 ℃.