发展了一种通过两次高分子辅助转移和选择性氧等离子体刻蚀技术大量制备交叉碳纳米管-石墨烯异质结的无损方法.拉曼光谱和导电性测试证明,制备的单层石墨烯薄片在大面积范围内质量均一、导电性好.而且,本文所讨论的单层石墨烯的生长和随后的器件制备也提供了大面积制备石墨烯薄片图案化的可重复性方法.该方法与传统的薄膜技术兼容,只需简易的几步便可把图案化的石墨烯集成到大规模的微电子器件回路中,有望实现流线型和自动化的石墨烯微电子器件的大量生产.这些研究结果为进一步制备分子整流器和其它功能纳米/分子器件提供了技术基础.
In this study,a nondestructive method to mass produce crossed nanotube-graphene junctions through twice polymer-mediated transfer techniques and selective oxygen plasma etching was developed.Raman and conductance measurements demonstrate that the quality and electrical properties of the single-layer graphene (SLG) sheets are uniform over a large area.Furthermore,SLG synthesis and device fabrication discussed here also provide a reproducible method to pattern graphene sheet arrays for making graphene-based microdevices over large areas and with high yield,which is compatible with standard thin film technologies and allows SLG to be integrated into large scale electronics circuitry within several simple steps that can be easily streamlined and automated.These results might offer grounds for the creation of a wide variety of molecular rectifiers and other functional nano/molecular devices.