中文摘要：

采用化学气相沉积的方法在In0.1Ga0.9N衬底上生长出In掺杂的n-ZnO纳米线阵列。电学输运测量得到单根n-ZnO纳米线的电阻率为0.001Ωcm,比同样方法在GaN衬底上生长的ZnO纳米线低约20倍。这个结果表明来自于In0.1Ga0.9N衬底中的In原子在高温生长过程中可能被掺入ZnO纳米线。制备成功单根n-ZnO纳米线/p＋-Si异质结构并研究了其电致发光特性。室温下电致发光光谱中可以看到一个窄的ZnO激子峰（约380nm）和一个中心位于700nm的来自Si衬底表面自然氧化硅发光中心的发光峰。

英文摘要：

The In doped n-ZnO nanowires （NWs） arrays were grown on Ino0.1Ga0.9 N substrates via the chemical vapor deposition method.The electrical transport measurements on single n-ZnO NWs show that they have a resistivity （0.001 Ω cm） about 20 times lower than that of the n-ZnO NWs grown on GaN substrates via the same method. This result indicates that indium atoms from the In0.1 Ga0.9N substrate may be doped into the ZnO NWs during the high-temperature synthesis process. The n-ZnO single NW （SNW）/p^＋ -Si heterojunctions were fabricated and their electroluminescence properties were studied. The room-temperature electroluminescence spectra show a narrow 380 nm excitonic peak from ZnO SNW, and a broad emission band centeres at 700 nm, which originates from the luminescent centers located in the native SiOx layer on the p^＋ -Si substrate.