中文摘要：

最近的发现三维(3D ) 拓扑的绝缘体(TI ) 为在压缩的事系统获得进一步的卓见进电子本地化提供了肥沃的地面。在过去几年里，研究努力的巨大的数量被奉献了在大量混乱力量调查 3D TI 和他们的低维的结构的电子运输性质，盖住到强壮的本地化的从弱 antilocalization 的运输政体。从这些获得的知识学习不仅提供敏感工具探查 3D TI 的表面状态而且为探索新奇拓扑的阶段形成一个基础。在这篇文章，我们简短在 3D TI 在本地化的学习考察主要试验性的进步，与 ultrathin TI 电影上的最近的结果的一个焦点。一些新运输数据将也被介绍以便补充在文学以前报导的那些。

英文摘要：

The recent discovery of three-dimensional（3D） topological insulators（TIs） has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature.