中文摘要：

本文报道了拓扑绝缘体（Bi0.5Sb0.5）2Te3薄膜中线性磁阻问题的系统性研究工作.此体系中,线性磁阻在很宽的温度和磁场范围内出现：磁场高达18 T时磁阻仍没有饱和趋势,并且当温度不高于50 K时,线性磁阻的大小对温度的变化不敏感.栅压调控化学势可明显改变线性磁阻的大小.当化学势接近狄拉克点时,线性磁阻最为显著.这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.

英文摘要：

Linear magnetoresistance（LMR） observed in a topological insulator（Bi0.5Sb0.5）2Te3thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point.These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material.