中文摘要：

六方氮化硼是一种与石墨烯结构类似的二维层状宽带隙绝缘材料,具有各种优异的物理性质.例如,它具有优异的力学性质和化学、热稳定性,在非线性光学领域、紫外激光器以及保护层材料方面具有潜在的应用.另外,由于其表面具有原子级平整,不存在悬挂键和陷阱电荷,使其成为石墨烯电学器件的一种优异的介电材料.它还可与其他二维材料组成平面/垂直结构的异质结,展现出各种新奇的性能和在电子器件方面的潜在应用.如何可控制备大面积、高质量的六方氮化硼是目前研究的核心科学问题.本文主要综述了通过化学气相沉积法制备六方氮化硼的一系列工作,其中包括最新的研究进展,对反应前驱体和基底的选择做了详细的介绍和讨论,并展望了该领域的发展前景.

英文摘要：

Hexagonal boron nitride, a two dimensional wide bandgap insulator material which has a similar structure with graphene, has many excellent physical properties. For instance, hexagonal boron nitride has super mechanical properties, chemical and thermal stabilities, resulting in its wide potential applications in the areas of non-linear optics, ultraviolet laser and protection layers. In addition, due to its atomically smooth surface that is free of trapped charge and dangling bonds, hexagonal boron nitride is a super dielectric material for graphene electrical devices. Moreover, hexagonal boron nitride can be fabricated into planar or vertical hetero-structures with other two dimensional materials, which show unique properties and potential applications in novel electronic devices. How to synthesize large scale and high quality hexagonal boron nitride is currently key scientific issue. Up to now, many strategies, including mechanical exfoliation, deposition by ion beam sputtering, co-segregation, chemical vapor deposition and so on, have been developed for growing this material. Among these methods, chemical vapor deposition provides a versatile platform for modulating the growth and etching process of this material and producing a large scale material with high quality. This review summarizes a series of work regarding the synthesis of hexagonal boron nitride by chemical vapor deposition method, in which most recent work is also presented, and discusses the choices of reaction precursors and substrates in details. The use of solid borane ammonia complex leads to better controls over the properties of hexagonal boron nitride such as layer numbers and uniformity compared with the use of mixed B and N compounds as precursors. On the other hand, the types, surface structures and properties of the supporting substrates are critical for the growth of hexagonal boron nitride. For example, Cu substrate has advantages for growing single layered hexagonal boron nitride crystal or film, while the use of Ni or Fe substrates