Modulation of physical properties of oxide thin films by multiple fields
- ISSN号:1674-1056
- 期刊名称:《中国物理B:英文版》
- 时间:0
- 分类:O484.1[理学—固体物理;理学—物理] O511[理学—低温物理;理学—物理]
- 作者机构:[1]Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China, [2]Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences, Ningbo 315201, China
- 相关基金:Project supported by the State Key Project of Fundamental Research of China(Grant No.2012CB933004);the National Natural Science Foundation of China(Grant Nos.11474295,51571208,51525103,and 11274322);Overseas,Hong Kong&Macao Scholars Collaborated Researching Fund(Grant No.51428201);the Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YZ201327);Ningbo Major Project for Science and Technology(Grant No.2014B11011);Ningbo International Cooperation Projects(Grant Nos.2012D10018 and 2014D10005);the Fund for Ningbo Science and Technology Innovation Team(Grant No.2015B11001);the Youth Innovation Promotion Association of the Chinese Academy of Sciences;the Key Research Program of the Chinese Academy of Sciences(Grant No.KJZD-EW-M05)
作者:
杨华礼[1,2], 王保敏[1,2], 朱小健[1,2], 尚杰[1,2], 陈斌[1,2], 李润伟[1,2]
关键词:
氧化物薄膜, 物理性质, 调制, 金属绝缘体转变, 巨磁电阻, 多功能性, 发展前景, 电子器件, multiple fields, functional oxides, thin film
中文摘要:
Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed.Some of the key issues and prospects of this area of study are also addressed.Oxide thin films exhibit versatile physical properties such as magnetism,ferroelectricity,piezoelectricity,metal–insulator transition(MIT),multiferroicity,colossal magnetoresistivity,switchable resistivity.More importantly,the exhibited multifunctionality can be tuned by various external fields,which has enabled demonstration of novel electronic devices.
英文摘要:
Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed.Some of the key issues and prospects of this area of study are also addressed.Oxide thin films exhibit versatile physical properties such as magnetism,ferroelectricity,piezoelectricity,metal–insulator transition(MIT),multiferroicity,colossal magnetoresistivity,switchable resistivity.More importantly,the exhibited multifunctionality can be tuned by various external fields,which has enabled demonstration of novel electronic devices.