中文摘要：

在ITO（In2O3：Sn）衬底上射频溅射ZnO薄膜,研究了射频溅射功率对ZnO薄膜的晶体结构,表面形貌及光学透过率的影响．结果表明,随着射频功率的提高,沿（002）方向生长的ZnO薄膜的结晶度显著增强,薄膜的表面颗粒略有减小,表面粗糙度由13．13 nm降低到5．06 nm．在300～400 nm波长范围内薄膜的光学透过率随着射频功率的增加而降低．在双层薄膜中空间内建电场的存在有助于光生电子和空穴有效地分离,使ZnO/ITO双层薄膜具有较强的光电响应能力,光电流达14μA．

英文摘要：

The influence of different RF-power on the crystal structures, surface morphologies and optical properties of ZnO thin films fabricatied on ITO （In2O3：Sn） substrates was investigated. With the increase of RF-power, the crystal quality of c-axis oriented ZnO thin films is improved dramatically; The grain size decreases slightly, which was determined by atomic force microscopy（AFM）; the roughness of ZnO thin films decreases from 13.13 nm to 5.06 nm; the optical transmittance of ZnO/ITO/glass decreases in the wavelength range from 300 nm to 400 nm. The existence of inner electric field in the interface of double layer is responsible for the effective separation between electrons and holes, which provides a good photoresponse and 14 μA photocurrent. This means the ZnO/ITO has great application potential on photovoltaic field and can be used as the electrode materials with high photocurrent and short response time.