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Pressure-Driven Enhancement of Topological Insulating State in Tin Telluride
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：2013.4.4
  • 页码：8437-8442
  • 相关项目：稀土掺杂III族纳米氮化物稀磁半导体的制备与高压研究
作者： Zhou, Dan|Li, Quan|Ma, Yanming|Cui, Qiliang|Chen, Changfeng|
同期刊论文项目
稀土掺杂III族纳米氮化物稀磁半导体的制备与高压研究
期刊论文 16
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