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采用铟束流保护下的调制中断生长技术改善（0001）GaN表面形貌,
  • 期刊名称：研究In束流保护调制束技术对材料生长形貌的影响
  • 时间：0
  • 相关项目：同GaN/AlGaN场效应晶体管电流崩塌效应相关的深中心和表面态问题的光离化谱和调制光电谱研究
同期刊论文项目
同GaN/AlGaN场效应晶体管电流崩塌效应相关的深中心和表面态问题的光离化谱和调制光电谱研究
期刊论文 10
同项目期刊论文
Threading dislocations related persistent photoconductivity effect in hydride vapor phase epitaxy gr
Theoretical Analysis of Current Crowding Effect in Metal/AlGaN/GaN Schottky Diodes and Its Reduction
GaN layers with different polarities prepared by radio frequency molecular beam epitaxy an character
Growth of GaN on buffer layer with different polarities by hydride phase epitaxy，
Properties of GaN on different polarity buffer layers by hydride vapor phase epitaxy，
Effect of III/V ratio of HT-AlN buffer layer on polarity selection and electrical quality of GaN fil
Preparation of porous GaN buffer and its influence on the redidual stress of GaN epilayers grown by
Low-resistance ohmic contact on undoped AlGaN/GaN heterostructure with surface treatment using CCl2F
利用混合极性制备多孔缓冲层及其在GaN厚膜外延中的应用